TRANSIENT PHOTOLUMINESCENCE IN GAINAS INP MULTIPLE-QUANTUM WELLS/

Photoluminescence decay in low-doped lattice-matched GaInAs/InP multip le quantum wells has been studied over a range of excess carrier densi ties. High carrier densities, which moved the Fermi level up to the to p of the wells, could be created without focusing the laser beam. Radi ative band-to-band recombination was shown to dominate up to excess ca rrier densities of 2.5 x 10(12) cm-2 per well. A kinetic radiative rec ombination model which included free carriers, excitons and photon rec yling was used to fit the transient decays in the regime in which the electrons were non-degenerate. At carrier densities greater than 2.5 x 10(12) cm-2 per well, when both electrons and holes were degenerate, the recombination was predominantly non-radiative. An Auger coefficien t of 4.0 x 10(-29) cm6 s-1 was estimated for 5 nm quantum wells. No st imulated recombination was detected