The electrical parameters of III-V semiconductor devices were measured
at cryogenic temperatures. These data were used for the accurate desi
gn of high-temperature superconductor (HTS)/III-V hybrid microwave cir
cuits. A number of such hybrid circuits, including amplifiers, oscilla
tors, balanced mixers, and a dual channel receiver front end were desi
gned and fabricated. Some of the test data for these circuits are pres
ented. (C) 1993 John Wiley & Sons, Inc.