A. Laor et al., ANISOTROPY IN RESIDUAL STRAINS AND THE LATTICE-PARAMETER OF REACTIVE SPUTTER-DEPOSITED ZRN FILMS, Thin solid films, 232(2), 1993, pp. 143-148
Lattice parameter anisotropy is a well-documented phenomenon in sputte
r-deposited ZrN films. The lattice parameter calculated from (111) dif
fraction peaks is greater than the lattice parameters calculated on th
e basis of other peaks. The mechanisms suggested to explain the anisot
ropy are discussed, and the most likely mechanism is indicated. The me
chanisms considered are: (a) the elastic anisotropy of nitride films,
(b) the Rhombohedral distortion, (c) selective entrapment of interstit
ial atoms and (d) selective growth of lattice defects. The first two m
echanisms are rejected as incompatible with the experimental data. The
remaining two are possible, but preference is given to the selective
entrapment of interstitials. This approach is taken because it seems t
o explain the development of microstrains and it is in line with the X
-ray technique applied to evaluate macrostrains.