ANISOTROPY IN RESIDUAL STRAINS AND THE LATTICE-PARAMETER OF REACTIVE SPUTTER-DEPOSITED ZRN FILMS

Citation
A. Laor et al., ANISOTROPY IN RESIDUAL STRAINS AND THE LATTICE-PARAMETER OF REACTIVE SPUTTER-DEPOSITED ZRN FILMS, Thin solid films, 232(2), 1993, pp. 143-148
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
232
Issue
2
Year of publication
1993
Pages
143 - 148
Database
ISI
SICI code
0040-6090(1993)232:2<143:AIRSAT>2.0.ZU;2-S
Abstract
Lattice parameter anisotropy is a well-documented phenomenon in sputte r-deposited ZrN films. The lattice parameter calculated from (111) dif fraction peaks is greater than the lattice parameters calculated on th e basis of other peaks. The mechanisms suggested to explain the anisot ropy are discussed, and the most likely mechanism is indicated. The me chanisms considered are: (a) the elastic anisotropy of nitride films, (b) the Rhombohedral distortion, (c) selective entrapment of interstit ial atoms and (d) selective growth of lattice defects. The first two m echanisms are rejected as incompatible with the experimental data. The remaining two are possible, but preference is given to the selective entrapment of interstitials. This approach is taken because it seems t o explain the development of microstrains and it is in line with the X -ray technique applied to evaluate macrostrains.