A STUDY OF ELECTRODEPOSITED GAAS FILMS

The preparation of polycrystalline GaAs films by using electrodepositi on technology is described in this paper. Using scanning electron micr oscopy, X-ray diffraction, spectrophotometry and capacitance voltage t esting. we have measured the characteristics of the films prepared. Th e results show that the stoichiometry of the film is Ga0.91As1.09. On the basis of a Mott-Schottky plot, the position of the energy band edg es of the film is calculated. Finally, the photoelectrochemical charac teristic of the Ga0.91As1.09 film/electrolyte junction is measured.