SELF-MODULATING SB INCORPORATION IN SI SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH/

Authors
FUJITA K FUKATSU S USAMI N SHIRAKI Y YAGUCHI H ITO R NAKAGAWA K
Citation
K. Fujita et al., SELF-MODULATING SB INCORPORATION IN SI SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH/, Surface science, 295(3), 1993, pp. 335-339
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
295
Issue
3
Year of publication
1993
Pages
335 - 339
Database
ISI
SICI code
0039-6028(1993)295:3<335:SSIISS>2.0.ZU;2-W
Abstract
Self-modulating incorporation of Sb atoms has been found in Si/SiGe su perlattices grown by conventional solid source Si molecular beam epita xy. The origin of this phenomenon has been attributed to the differenc e in the segregation length of Sb atoms in Si and SiGe layers. It has been found that the segregation length of Sb in Si1-xGex layers increa ses as the Ge composition, x, increases and that Sb atoms are incorpor ated mainly in Si layers when Si/SiGe superlattices are grown.