THE FANO-ANDERSON MODEL APPLIED TO ELECTRONS IN MIS-INVERSION LAYERS

Subband states in n-inversion layers on nar-row gap semiconductors are resonances due to the Zener coupling to the continuum of the bulk val ence band. Thus excitation between subband states resembles the autoio nization process of atomic physics described long ago by Fano. Startin g from Kane's model for narrow gap semiconductors to describe the subb and states we map the problem onto the Fano-Anderson Hamiltonian by ap plying a Schrieffer-Wolff transformation. This problem is solved self- consistently using an analytical surface potential. We calculate the r elative transmission rate DELTAT(omega)/T(omega) for inversion layers on narrow-gap Hg1-xCdxTe and discuss our results in comparison with ex perimental data.