Jd. Cawley, NUMERICAL-MODELS FOR PREDICTING TRACER PROFILES IN SILICON DOUBLE-OXIDATION EXPERIMENTS, Journal of the American Ceramic Society, 76(5), 1993, pp. 1124-1131
Standard numerical techniques are used to model the development of tra
cer profiles in ''double-oxidation'' experiments involving silicon or
silicon-based ceramics. These models are more generally applicable tha
n previously developed analytical models. In particular, the numerical
model allows the relative contribution to oxidation by network and in
terstitial oxygen diffusion through the silica scale to be varied, and
can accommodate a position-dependent diffusion coefficient. The resul
ts of calculations are compared to previously published profiles.