NI, IN AND SB IMPLANTED PT AND V CATALYZED THIN-FILM SNO2 GAS SENSORS

Authors
SULZ G KUHNER G REITER H UPTMOOR G SCHWEIZER W LOW H LACHER M STEINER K
Citation
G. Sulz et al., NI, IN AND SB IMPLANTED PT AND V CATALYZED THIN-FILM SNO2 GAS SENSORS, Sensors and actuators. B, Chemical, 16(1-3), 1993, pp. 390-395
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
16
Issue
1-3
Year of publication
1993
Pages
390 - 395
Database
ISI
SICI code
0925-4005(1993)16:1-3<390:NIASIP>2.0.ZU;2-O
Abstract
Thin-film technologies lead to low cost and reliable microsystems comb ining electronics and sensors. However, in competition with microelect ronic fabrication sensor technologies exhibit a lack of experience cre ating difficulties in microsystem integration. In this paper a simple implantation process is introduced to improve thin-film sensor perform ance. In, Ni and Sb-doped thin-film V and Pt catalysed SnO2 ps sensors are presented. The sensor response due to pulses of H-2, Co(x), NH3, NO2, CH, and C2H5OH is discussed in the temperature range between 100 and 400-degrees-C.