RESISTIVITY IN C-60 THIN-FILMS OF HIGH CRYSTALLINITY

Authors
Citation
A. Zahab et L. Firlej, RESISTIVITY IN C-60 THIN-FILMS OF HIGH CRYSTALLINITY, Solid state communications, 87(10), 1993, pp. 893-897
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
87
Issue
10
Year of publication
1993
Pages
893 - 897
Database
ISI
SICI code
0038-1098(1993)87:10<893:RICTOH>2.0.ZU;2-H
Abstract
Electrical studies of C60 thin films of high crystallinity are present ed. The influence of sample annealing on crystallinity is emphasized. The dependence of the film resistivity on oxygen intercalation and the reversibility of the transport properties upon thermal treatement in vacuum and on air are reported. A comparison with a single crystal con duction is dons and a simple model of oxygen-involved electronic trans port in C60 thin films is proposed.