HIGHLY ORIENTED, CHEMICALLY PREPARED PB(ZR,TI)O3 THIN-FILMS

We have fabricated highly oriented, chemically prepared thin films of Pb(Zr0.40Ti0.60)O3 (PZT 40/60) on both insulating and conducting subst rates. While (100) MgO single crystals were used as the insulating sub strates, the conducting substrates were fabricated by RF magnetron spu tter deposition of 100-nm-thick (100) Pt films onto (100) MgO substrat es. For comparison, we also fabricated PZT 40/60 films that had no sig nificant preferential orientation on platinized MgO substrates. Sputte r deposition of an underlying amorphous Pt film was used to fabricate randomly oriented PZT 40/60 films. Highly (001) oriented PZT 40/60 fil ms had higher remanent polarization (61 muC/cm2 compared to 41 muC/cm2 ) and lower relative dielectric constant (368 compared to 466) than PZ T 40/60 films that were randomly oriented.