The mechanism for grain growth of beta-SiAlON has been investigated by
annealing high-density beta-SiAlON-YAG materials at 1650-degrees-C. A
n observed decrease in grain growth with increasing weight fraction of
liquid confirms a diffusion-controlled growth mechanism in the system
. The grain-growth mechanism is further characterized by the developme
nt of large elongated grains in addition to smaller grains. After prol
onged heating, an equilibrium maximum grain size is developed causing
a homogenization of the microstructure.