THE NEW ALPDRE ICOSAHEDRAL PHASE - TOWARDS UNIVERSAL ELECTRONIC BEHAVIOR FOR QUASI-CRYSTALS

Citation
C. Berger et al., THE NEW ALPDRE ICOSAHEDRAL PHASE - TOWARDS UNIVERSAL ELECTRONIC BEHAVIOR FOR QUASI-CRYSTALS, Solid state communications, 87(11), 1993, pp. 977-979
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
87
Issue
11
Year of publication
1993
Pages
977 - 979
Database
ISI
SICI code
0038-1098(1993)87:11<977:TNAIP->2.0.ZU;2-E
Abstract
Electronic properties have been measured for different new composition s close to Al70.5Pd22Re7.5 of the icosahedral phase. They exhibit the same exceptional behaviours that were previously found for other stabl e quasicrystalline phases exept for the resistivity magnitude which is much higher that what is observed for the parent AlPdMn icosahedral p hase. For high quality quasicrystals, the conductivity reaches the sam e order of magnitude as the one for doped semiconductors. The conducti vity sigma(T) increases rapidly with temperature. Sigma(T) curves appe ar to be parallel for all i-AlPdRe samples, although conductivity valu es strongly varies with the composition and the structural quality. Hi gh field magnetoconductivity indicates the presence of quantum interfe rence effects including strong electron-electron interactions. All the se features strengthen the concept of universal electronic behaviour f or these complex phases, with particularly enhanced anomalous behaviou r for i-AlPdRe.