RAMAN-STUDY OF PHOTOEXCITED C60

Citation
K. Sinha et al., RAMAN-STUDY OF PHOTOEXCITED C60, Solid state communications, 87(11), 1993, pp. 981-986
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
87
Issue
11
Year of publication
1993
Pages
981 - 986
Database
ISI
SICI code
0038-1098(1993)87:11<981:ROPC>2.0.ZU;2-4
Abstract
The high-energy pentagonal pinch mode of C60 is known to soften under high incident laser irradiance in an oxygen-free environment. We have studied this phenomenon in C60 films, single crystals, and solutions i n CS2. Our Raman, optical absorption, and EPR data indicate that the s oftened Raman peak is related to very long lived states in C60. The ex periments are consistent with the recently proposed photoinduced polym erization of C60 and also suggest the presence of C60 anions in the ph otoexcited material.