A NEW SNO2 LOW-TEMPERATURE DEPOSITION TECHNIQUE FOR INTEGRATED GAS SENSORS

Citation
V. Demarne et A. Grisel, A NEW SNO2 LOW-TEMPERATURE DEPOSITION TECHNIQUE FOR INTEGRATED GAS SENSORS, Sensors and actuators. B, Chemical, 15(1-3), 1993, pp. 63-67
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09254005
Volume
15
Issue
1-3
Year of publication
1993
Pages
63 - 67
Database
ISI
SICI code
0925-4005(1993)15:1-3<63:ANSLDT>2.0.ZU;2-Y
Abstract
A new SnO2 low temperature deposition technique for integrated gas sen sors is presented. Two different film thicknesses are investigated, as well as different catalysts. A correlation is established between the deposition parameters, the texture of the layers and the gas sensitiv ities. An explanation for the quite different behaviours of these laye rs is proposed. The best results are obtained with the thinner film ga s sensors, for which Schottky barriers are formed between grains after thermal oxidation. A comparison between these integrated gas sensors and conventional sintered ones shows the major advantages of the integ rated sensors.