DIMENSIONAL REDUCTION OF GAAS QUANTUM-WELL CUT BY DISLOCATION SLIP OBSERVED BY PHOTOLUMINESCENCE

Dislocation slip properties are used in order to generate quasi-one-di mensional structures with sharp lateral confinement by cutting 5 nm Ga As quantum wells grown by molecular-beam epitaxy on (001) GaAs substra tes. The photoluminescence (PL) spectra of three samples obtained in d ifferent experimental conditions are presented. The PL spectra of two samples representing the smallest wire size (congruent-to 25 nm) exhib it a blue shift of 9 meV in very good agreement with theoretical predi ctions. The intensity and the FWHM of the spectra are discussed and th e problem of residual stress induced by the deformation technique is a pproached.