1.3-MU-M INASYP1-Y-INP STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWNBY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We report on the growth of InAsyP1-y-InP strained-layer quantum wells using metalorganic chemical vapor deposition (MOCVD) and the low thres hold operation of novel 1.3 mum InAsyP1-y-InP strained-layer quantum-w ell laser diodes (SL-QW LD's) with separate-confinement heterostructur e (SCH). Growth temperature has been investigated in terms of the crys tal quality of a grown layer using full width at half maximum (FWHM) o f low temperature (77 K) photoluminescence (PL). As a result, growth t emperature around 550-degrees-C, which is lower than that of GaInAsP-I nP (600-degrees-C), has been found to obtain good crystal quality. The critical thickness is determined to be about 30 nm from the PL and tr ansmission electron microscopy measurements for the case of y = 0.55, corresponding to the amount strain of 1.77%. The FWHM of room temperat ure PL of the InAs0.55P0.45-InP strained-layer double-quantum-well (DQ W) laser structure was as narrow as 30.1 meV, which is 3/4 of lattice matched 1.3 mum GaInAsP-InP quantum well, with a peak wavelength of 1. 29 mum. The threshold current density of 0.41 kA/cm2 was obtained on 1 00 mum wide broad contact SL-DQW LD's with a cavity length of 900 mum. A very low threshold current of 1.8 mA was obtained in an all MOCVD g rown 200 mum long buried heterostructure SCH-DQW LD with high reflecti ve coating. The maximum CW operating temperature of 120-degrees-C was obtained with a low threshold current of 36 mA. The characteristic tem perature was 62 K in the temperature range of 20 to 60-degrees-C. A ve ry small turn-on delay time of 200 ps was measured for a 1.8 mA thresh old LD when 30 mA modulation pulse current is applied without any bias .