COMPRESSIVELY STRAINED 1.3-MU-M INASP INP AND GAINASP/INP MULTIPLE-QUANTUM-WELL LASERS FOR HIGH-SPEED PARALLEL DATA-TRANSMISSION SYSTEMS/

Turn-on delay times in the pulse response of compressively strained In AsP/InP double quantum well (DQW) lasers and GaInAsP/InP multiple quan tum well (MQW) lasers emitting at 1.3 mum were investigated. The InAsP /InP DQW lasers with 200 mum cavity length and high reflection coating achieved both a very low threshold current of 1.8 mA and a small turn -on delay time (200 ps), even under a bias-less 30 mA pulse current. T hese are suitable performances for parallel digital data transmitters. Other conventional types of lasers, such as compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers, were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained Ga InAsP MQW lasers when it was compared to the lattice-matched GaInAsP M QW lasers and conventional double-heterostructure lasers. To explain t his increase in the carrier life-time, the effect of the carrier trans port on the carrier life-time was studied. Finally, the additional pow er penalty due to the laser turn-on delay was simulated and discussed.