REDUCTION OF LINEWIDTH ENHANCEMENT FACTOR IN INGAASP-INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS

Authors
KANO F YAMANAKA T YAMAMOTO N YOSHIKUNI Y MAWATARI H TOHMORI Y YAMAMOTO M YOKOYAMA K
Citation
F. Kano et al., REDUCTION OF LINEWIDTH ENHANCEMENT FACTOR IN INGAASP-INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1553-1559
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
29
Issue
6
Year of publication
1993
Pages
1553 - 1559
Database
ISI
SICI code
0018-9197(1993)29:6<1553:ROLEFI>2.0.ZU;2-Y
Abstract
The linewidth enchancement factor alpha in InGa-AsP-InP modulation-dop ed strained multiple-quantum-well (MQW) lasers has been evaluated theo retically and experimentally. A reduction of the alpha-parameter due t o modulation doping is demonstrated. A small alpha-parameter of less t han 1 is obtained not at wavelength for the gain peak but within certa in range of wavelength where the gain is positive. The smaller alpha-p arameter in modulation-doped strained MQW lasers should result in perf ormance improvements that are advantageous for optical communication s ystem applications.