1.3-MU-M MULTIQUANTUM-WELL DECOUPLED CONFINEMENT HETEROSTRUCTURE (MQW-DCH) LASER-DIODES

Citation
S. Hausser et al., 1.3-MU-M MULTIQUANTUM-WELL DECOUPLED CONFINEMENT HETEROSTRUCTURE (MQW-DCH) LASER-DIODES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1596-1600
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
29
Issue
6
Year of publication
1993
Pages
1596 - 1600
Database
ISI
SICI code
0018-9197(1993)29:6<1596:1MDCH(>2.0.ZU;2-9
Abstract
A 1.3 mum multiquantum well decoupled confinement heterostructure (MQW -DCH) laser diode has been developed. This novel laser structure intro duces internal barriers between the active quantum wells and the optic al waveguide. It is thus possible to have, at the same time, deep quan tum wells to prevent carrier leakage and a strong optical waveguide wi th a high confinement factor. The barrier parameters have been optimiz ed using numerical modeling tools, and the DCH laser diode has been bu ilt using chemical beam epitaxy. The broad-area transparency current d ensity is 140 A . cm-2, the internal efficiency is 0.83, the waveguide loss is 5 cm-1, and T0 = 62 K. Ridge waveguide laser diodes have a ro om temperature threshold of 8 mA and an efficiency of 0.32 mW/mA.