S. Hausser et al., 1.3-MU-M MULTIQUANTUM-WELL DECOUPLED CONFINEMENT HETEROSTRUCTURE (MQW-DCH) LASER-DIODES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1596-1600
A 1.3 mum multiquantum well decoupled confinement heterostructure (MQW
-DCH) laser diode has been developed. This novel laser structure intro
duces internal barriers between the active quantum wells and the optic
al waveguide. It is thus possible to have, at the same time, deep quan
tum wells to prevent carrier leakage and a strong optical waveguide wi
th a high confinement factor. The barrier parameters have been optimiz
ed using numerical modeling tools, and the DCH laser diode has been bu
ilt using chemical beam epitaxy. The broad-area transparency current d
ensity is 140 A . cm-2, the internal efficiency is 0.83, the waveguide
loss is 5 cm-1, and T0 = 62 K. Ridge waveguide laser diodes have a ro
om temperature threshold of 8 mA and an efficiency of 0.32 mW/mA.