MEMORY DIAGRAM OF SINGLE-MODE SEMICONDUCTOR-LASERS

A memory diagram, or regions where pattern effects appear at the outpu t of the laser, in the bias current versus modulation period plane is obtained, both by numerical simulation of the rate equations and by us ing an analytical approach. A simple method, based on the superpositio n of the turn-on time probability distribution for the periodic sequen ce ''... 1111...'' of input bits and the turn-on time probability dist ribution obtained for repetitive gain switching, is used to describe t he response of the laser to a pseudorandom word modulation of the inje ction current.