HIGH-SPEED OPERATION OF STRAINED INGAAS INGAASP MQW LASERS UNDER ZERO-BIAS CONDITION/

We report high-speed zero-bias operation of 1.5 mum In0.62Ga0.38As/InG aAsP compressive-strained-MQW lasers at high temperatures. This is ach ieved by optimizing the SCH composition to minimize the lasing delay t ime. Using the laser with an optimized SCH composition, we demonstrate zero-bias, 1 Gb/s modulation at 70-degrees-C with a large eye opening time of 700 ps. In the optimization, strong carrier lifetime dependen ce on the SCH composition is observed. To see this dependence more pre cisely, we experimentally investigate the SCH structure dependence of effective carrier recombination coefficient B, which is an essential p arameter for the carrier lifetime. The dependence is explained by the model of carrier transportation between the SCH layers and the wells.