30-MW 690-NM HIGH-POWER STRAINED-QUANTUM-WELL ALGAINP LASER

This paper presents a high-power 690-nm AlGaInP laser for use in a hig h-density rewritable-optical-disk memory system. The deterioration of its temperature characteristics, which results from the high-power-ori ented laser structure, is improved by using compressively strained GaI nP quantum wells as the active layer. Output power of 40 mW is achieve d up to 80-degrees-C. Stable fundamental-transverse-mode operation is obtained up to 50 mW. Output-power-induced facet degradation is suppre ssed by an Al2O3 facet coating. The lasers operate stably at 30 mW at 50-degrees-C for over 2600 h. The mean extrapolated lifetime is 10 000 h.