HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER

Authors
RENNIE J OKAJIMA M WATANABE M HATAKOSHI G
Citation
J. Rennie et al., HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER, IEEE journal of quantum electronics, 29(6), 1993, pp. 1857-1862
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
29
Issue
6
Year of publication
1993
Pages
1857 - 1862
Database
ISI
SICI code
0018-9197(1993)29:6<1857:H(COO6>2.0.ZU;2-7
Abstract
A modified multiple quantum barrier structure has been applied to a 63 0 nm band laser diode. The result is a laser exhibiting a high maximum operating temperature, of 74-degrees-C, and a low threshold current o f 49 mA. These characteristics correspond to a 22-degrees-C increase i n the operation temperature and over a 50% decrease in the threshold c urrent, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to our knowledge, that a significant decrease in the threshold current of a laser has been directly attrib uted to the influence of a multiple quantum barrier.