LOW-THRESHOLD STRAINED GAINP QUANTUM-WELL RIDGE LASERS WITH ALGAAS CLADDING LAYERS

Visible lasers with two strained GaInP quantum wells and AlGaAs claddi ng layers have been fabricated using metal-organic vapor phase epitaxy . As a device structure, a dry-etched surface ridge has been chosen, w hich results in a small astigmatism and a low threshold current. Owing to an electroplated heat spreader on top of the ridge, the devices ca n be operated continuous-wave junction-side-up at temperatures up to 1 00-degrees-C. Lasers mounted junction-side-down with coated mirror fac ets operating at 30 mW output power show single-mode behavior and good reliability, as proven by a lifetime test of over 3000 h.