OPTIMUM ASYMMETRIC MIRROR FACET STRUCTURE FOR HIGH-EFFICIENCY SEMICONDUCTOR-LASERS

Authors
HIGASHI T OGITA S SODA H KOBAYASHI H KURAKAKE H AOKI O OKAZAKI N
Citation
T. Higashi et al., OPTIMUM ASYMMETRIC MIRROR FACET STRUCTURE FOR HIGH-EFFICIENCY SEMICONDUCTOR-LASERS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1918-1923
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
29
Issue
6
Year of publication
1993
Pages
1918 - 1923
Database
ISI
SICI code
0018-9197(1993)29:6<1918:OAMFSF>2.0.ZU;2-0
Abstract
The asymmetric mirror facet structure is widely used to obtain high ef ficiency in FP-type semiconductor lasers. We developed a new design th eory of the asymmetric mirror facet structure for high-efficiency semi conductor lasers, considering the spatial hole burning (SHB) effect.