0.98-1.02-MU-M STRAINED INGAAS ALGAAS DOUBLE-QUANTUM-WELL HIGH-POWER LASERS WITH GAINP BURIED WAVE-GUIDES/

0.98-1.02-mum strained InGaAs/AlGaAs double quantum-well laser diodes (LD's) with GaInP buried wave-guides have been developed as light sour ces for pumping fiber amplifiers. These LD's have a flat surface and a low-loss real index waveguide that provides high differential quantum efficiency and efficient heat dissipation. For 0.98-mum LD's, stable operation for over 10 000 h under 100 mW CW conditions at 50-degrees-C has been achieved, and the extrapolated lifetime is estimated to be 6 0,000 h at 50-degrees-C. For 1.02-mum LD's, a maximum light output pow er of 415 mW, fiber output power as high as 70 mW, and stable operatio n for over 2300 h at 100 mW and 50-degrees-C have been obtained.