W. Nakwaski et M. Osinski, THERMAL-ANALYSIS OF GAAS-ALGAAS ETCHED-WELL SURFACE-EMITTING DOUBLE-HETEROSTRUCTURE LASERS WITH DIELECTRIC MIRRORS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1981-1995
A comprehensive self-consistent thermal-electrical model is described
and used to investigate thermal properties of GaAs-AlGaAs etched-well
double-heterostructure vertical-cavity surface-emitting lasers (VCSEL'
s) with dielectric mirrors. Special attention is paid to effects of va
rying the active-region diameter on thermal behavior of the device. Th
e active-region diameter is optimized with the goal of reducing the re
lative power loss due to heating and maximizing the optical output pow
er. The optimal diameter, such that the excess of pumping current over
the CW lasing threshold at the corresponding active-region temperatur
e is maximum, is 16 mum.