THERMAL-ANALYSIS OF GAAS-ALGAAS ETCHED-WELL SURFACE-EMITTING DOUBLE-HETEROSTRUCTURE LASERS WITH DIELECTRIC MIRRORS

Citation
W. Nakwaski et M. Osinski, THERMAL-ANALYSIS OF GAAS-ALGAAS ETCHED-WELL SURFACE-EMITTING DOUBLE-HETEROSTRUCTURE LASERS WITH DIELECTRIC MIRRORS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1981-1995
Citations number
47
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
29
Issue
6
Year of publication
1993
Pages
1981 - 1995
Database
ISI
SICI code
0018-9197(1993)29:6<1981:TOGESD>2.0.ZU;2-S
Abstract
A comprehensive self-consistent thermal-electrical model is described and used to investigate thermal properties of GaAs-AlGaAs etched-well double-heterostructure vertical-cavity surface-emitting lasers (VCSEL' s) with dielectric mirrors. Special attention is paid to effects of va rying the active-region diameter on thermal behavior of the device. Th e active-region diameter is optimized with the goal of reducing the re lative power loss due to heating and maximizing the optical output pow er. The optimal diameter, such that the excess of pumping current over the CW lasing threshold at the corresponding active-region temperatur e is maximum, is 16 mum.