RELIABILITY OF GAAS-BASED SEMICONDUCTOR DIODE-LASERS - 0.6-1.1-MU-M

The reliability of GaAs-based laser diodes operating at 0.6-1.1 mum ha s been the subject of research at our facility for many years. Signifi cant progress has been made into determining the relationships between failure mechanisms and lasing wavelength, strain, and the presence of indium and/or aluminum. Considerable effort has been dedicated to inv estigating sudden failure and gradual degradation with over one millio n hours of laser diode lifetesting to date. In this paper we summarize our results in laser reliability studies of GaInP (0.6-0.7 mum); AlGa As, InAlGaAs, and InGaAsP (0.81 mum); GaAs (0.86 mum); and InGaAs (0.9 -1.1 mum) quantum-well laser diodes.