REMARKABLE IMPROVEMENT IN THE TEMPERATURE CHARACTERISTICS OF GAAS-LASERS USING AN INGAALP CLADDING LAYER

A novel GaAs laser diode employing InGaAlP as the cladding has been in vestigated. Continuous wave operation was obtained at temperatures as high as 212-degrees-C. A large characteristic temperature T0 of 190 K was maintained up to 150-degrees-C. These results were considered to b e due to a reduction of electron overflow by a large band-gap differen ce between the GaAs active and InGaAlP cladding layers. Laser characte ristics did not indicate any significant problem due to a heterointerf ace of GaAs-InGaAlP including high Al composition.