ROOM-TEMPERATURE OPERATION OF GAINAS GAINASP/INP SCH LASERS WITH QUANTUM-WIRE SIZE ACTIVE-REGION/

Improvements in the fabrication process of GaInAs(P)/InP devices consi sting of an ultrafine structure by using two-step organometallic vapor phase epitaxy growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process enabled us to ach ieve, for the first time, a room-temperature continuous-wave operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30 nm-wide vertically stacked triple quantum-wire active region within th e period of 70 nm. A large blue shift of approximately 40 nm was obser ved in both the lasing and the electroluminescence spectra of Ga0.3In0 .7As/InP compressively strained multi-quantum-well wirelasers consisti ng of a 3 nm-thick and 30-60 nm-wide five-wire active region, which su ggests a reduced effective mass of holes along the in-plane direction.