RAMAN STUDIES OF STERIC HINDRANCE AND SURFACE RELAXATION OF STEPPED H-TERMINATED SILICON SURFACES

Authors
HINES MA CHABAL YJ HARRIS TD HARRIS AL
Citation
Ma. Hines et al., RAMAN STUDIES OF STERIC HINDRANCE AND SURFACE RELAXATION OF STEPPED H-TERMINATED SILICON SURFACES, Physical review letters, 71(14), 1993, pp. 2280-2283
Citations number
24
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
14
Year of publication
1993
Pages
2280 - 2283
Database
ISI
SICI code
0031-9007(1993)71:14<2280:RSOSHA>2.0.ZU;2-E
Abstract
Polarized, angle-resolved Raman spectra of the Si-H stretching vibrati ons on stepped H-terminated Si(111) surfaces confirm the constrained o rientation of the step dihydride derived from ab initio cluster calcul ations. They further show that the step normal modes involve little co ncerted motion of the step atoms, indicating that step relaxation redu ces the steric interaction much further than predicted.