VANADIUM DIOXIDE THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION FROM VANADIUM(III) ACETYLACETONATE

Vanadium dioxide thin films were prepared by an atmospheric-pressure c hemical vapour deposition method. The raw material was vanadium(III) a cetylacetonate. Polycrystalline thin films were obtained at a reaction temperature of 500-degrees-C. Slow post-deposition cooling of the dep osits on a substrate of fused quartz or sapphire single crystal yields vanadium dioxide films which are not mixed with other phases, i.e. V3 O7 or V4O9. Optical and electrical switching behaviours strongly depen d on film thickness. At a film thickness of about 300 nm the transitio n temperature showed a minimum value of 44-degrees-C.