M. Nagasawa et al., METAL-TO-INSULATOR TRANSITION AND THRESHOLD ELECTRIC-FIELD FOR SDW DEPINNING IN (TMTSF)2X UNDER PRESSURE, Journal de physique. IV, 3(C2), 1993, pp. 49-52
Metal-to-insulator transition temperature (T(MI)) and the activation e
nergy (E(A)) in the SDW phase of (TMTSF)2AsF6 and (TMTSF)2PF6 were det
ermined under pressure. Pressure dependence of 2E(A)/k(B)T(MI) near th
e critical pressure of the SDW phase, is compared with the mean-field
theory by Yamaji. It was found that T(MI) is not equal to the normal-t
o-SDW transition temperature but lower than T(SDW). Non-linear conduct
ion was observed in a narrow temperature range above T(MI).