METAL-TO-INSULATOR TRANSITION AND THRESHOLD ELECTRIC-FIELD FOR SDW DEPINNING IN (TMTSF)2X UNDER PRESSURE

Authors
NAGASAWA M SAMBONGI T NOMURA K ANZAI H
Citation
M. Nagasawa et al., METAL-TO-INSULATOR TRANSITION AND THRESHOLD ELECTRIC-FIELD FOR SDW DEPINNING IN (TMTSF)2X UNDER PRESSURE, Journal de physique. IV, 3(C2), 1993, pp. 49-52
Citations number
3
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
3
Issue
C2
Year of publication
1993
Pages
49 - 52
Database
ISI
SICI code
1155-4339(1993)3:C2<49:MTATEF>2.0.ZU;2-J
Abstract
Metal-to-insulator transition temperature (T(MI)) and the activation e nergy (E(A)) in the SDW phase of (TMTSF)2AsF6 and (TMTSF)2PF6 were det ermined under pressure. Pressure dependence of 2E(A)/k(B)T(MI) near th e critical pressure of the SDW phase, is compared with the mean-field theory by Yamaji. It was found that T(MI) is not equal to the normal-t o-SDW transition temperature but lower than T(SDW). Non-linear conduct ion was observed in a narrow temperature range above T(MI).