An estimate of the gap DELTA(rho) that opens at the Fermi level in a 3
/4-filled Hubbard model with alternating hopping integrals is obtained
on the basis of weak and strong coupling results. Assuming that this
gap will induce a minimum of resistivity at a temperature T(rho) congr
uent-to DELTA(rho)/pi, we show that the hopping integrals provided by
quantum chemistry calculations based on structural data are in reasona
ble agreement with the experimental resistivity curves if U is the sam
e for all compounds (congruent-to 850meV). In particular, very small v
alues can be obtained for the TMTSF series without assuming that the d
imerization is itself very small. The discrepancies between this model
and the magnetic data are briefly discussed.