SIMULATION OF THIN-FILM GROWTH

A two-dimensional simulation model of thin-film deposition, which invo lves the effect of the incident kinetic energy of atoms and the mobili ty of the substrate temperature, is developed. Lennard-Jones potential and nuclear scattering are used to characterize the atom-atom interac tion. The effect of substrate temperature on the relaxation of deposit ing particles is also considered. Some simulation results are presente d and discussed in detail.