AMORPHOUS-SILICON AND AMORPHOUS-SILICON NITRIDE FILMS PREPARED BY A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS AS OPTICAL COATING MATERIALS

Authors
TSAI RY KUO LC HO FC
Citation
Ry. Tsai et al., AMORPHOUS-SILICON AND AMORPHOUS-SILICON NITRIDE FILMS PREPARED BY A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS AS OPTICAL COATING MATERIALS, Applied optics, 32(28), 1993, pp. 5561-5566
Citations number
13
Categorie Soggetti
Optics
Journal title
Applied optics → ACNP
ISSN journal
00036935
Volume
32
Issue
28
Year of publication
1993
Pages
5561 - 5566
Database
ISI
SICI code
0003-6935(1993)32:28<5561:AAANFP>2.0.ZU;2-F
Abstract
Durable, uniform, and reproducible amorphous silicon and amorphous sil icon nitride thin films deposited by plasma-enhanced chemical vapor de position that are appropriate for the design and fabrication of optica l interference filters in the near-infrared region are found. Optical and physicalk properties of single-layer films are discussed. The dura bility and performance of Fabry-Perot interference filters and a 15-la yer long-pass edge filter in the near-infrared region designed and fab ricated with these two thin-film materials are also reported.