AES STUDY OF SYNTACTIC COALESCENCE OVERGROWTH OF ALPHA-SIC (15R) ON ALPHA-SIC (6H)

Authors
DIN SU SULEMAN M
Citation
Su. Din et M. Suleman, AES STUDY OF SYNTACTIC COALESCENCE OVERGROWTH OF ALPHA-SIC (15R) ON ALPHA-SIC (6H), Materials letters, 17(5), 1993, pp. 241-245
Citations number
17
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
17
Issue
5
Year of publication
1993
Pages
241 - 245
Database
ISI
SICI code
0167-577X(1993)17:5<241:ASOSCO>2.0.ZU;2-4
Abstract
Auger electron spectroscopy (AES) has been employed in the study of ov ergrowth of alpha-SiC (15R) on alpha-SiC (6H). The Auger depth profili ng revealed the interface between these two polytypes. it is estimated to be almost-equal-to 0.25 mum wide. An increase in density of disloc ations, as revealed by chemical etching, was noticed at the interface. The overgrowth of a polytype on the other is explained as the consequ ence of cooling conditions.