OBSERVATION OF A BURIED AMORPHOUS LAYER INDUCED BY SI IMPLANTATION INTO NI

Authors
RAO Z WILLIAMS JS POGANY AP SOOD DK
Citation
Z. Rao et al., OBSERVATION OF A BURIED AMORPHOUS LAYER INDUCED BY SI IMPLANTATION INTO NI, Materials letters, 17(5), 1993, pp. 253-257
Citations number
17
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
17
Issue
5
Year of publication
1993
Pages
253 - 257
Database
ISI
SICI code
0167-577X(1993)17:5<253:OOABAL>2.0.ZU;2-#
Abstract
A buried amorphous Ni-Si layer inside a crystalline Ni substrate has b een produced by channeled Si implantation and observed using high dept h resolution Rutherford backscattering and channeling as well as trans mission electron microscopy. The buried amorphous layer is in the dept h region where the Si concentration is > 30 at%. The significance of t his observation on the mechanisms of ion-implantation-induced amorphiz ation of metals is discussed.