PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF CUALXGA1-XSE2 ALLOYS

Citation
S. Shirakata et al., PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF CUALXGA1-XSE2 ALLOYS, JPN J A P 2, 32(9B), 1993, pp. 120001304-120001307
Citations number
17
Categorie Soggetti
Physics, Applied
Volume
32
Issue
9B
Year of publication
1993
Pages
120001304 - 120001307
Database
ISI
SICI code
Abstract
Photoreflectance (PR) and photoluminescence (PL) measurements have bee n carried out at 77 K on single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Energies of excitons associat ed with uppermost valence bands have been determined as a function of composition based on the analysis of PR spectra. Spin-orbit and crysta l field splittings have been obtained. PL spectra exhibited an exciton -related line, a peak due to free-to-acceptor transition and a deep le vel emission band. These PL lines and peaks are discussed in terms of the compositional dependence of the exciton energy.