Hc. Cheng et al., NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3 AR POST-ETCHING-TREATED N-SI SUBSTRATES/, JPN J A P 2, 32(9B), 1993, pp. 120001312-120001314
Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma
was reported to be efficient in removing the residual layer and defec
ts caused by reactive ion etching (RIE) as well as producing a clean s
urface conventionally believed suitable for electrical contacts. Howev
er, the PET process was found to increase the contact resistance betwe
en Al-1 wt%Si and n+-Si substrate for the first time. It is attributed
to the formation of p-type-like Si epitaxy on the n+-Si substrate and
the lower effective surface donor concentration.