GROWTH-TEMPERATURE DEPENDENCE OF THE QUALITY OF AL2O3 PREPARED BY SEQUENTIAL SURFACE CHEMICAL-REACTION OF TRIMETHYLALUMINUM AND H2O2

Dependence of the quality of thin films of Al2O3 On the growth tempera ture was investigated in the surface reaction limited growth system. I t has been found that the density, the chemical bonding strength, and the electrical properties improve significantly with increasing growth temperature although the growth rate remains nearly constant. Also, F ourier transform infrared spectroscopy indicates that hydrogen incorpo ration into the films is nearly negligible.