LATTICE-DEFECTS IN O-DOPED INDIUM OXIDE-FILMS( IMPLANTED TIN)

In this work we use transmission electron microscopy to identify exten ded lattice defects which result from O+ ion implantation at a dose of 1.3 x 10(15)/cm2 into S n-doped In2O3 at room temperature. Measuremen t of the resistivity, mobility, carrier density, and transmissivity to visible light as a function of implant dose (0 to 1.3 x 10(15)/cm2) r eveals that increasing dose results in a degradation in electronic and optical properties of ITO. Analysis of these results using charged an d neutral scattering models reveals that the observed changes in elect ronic and optical properties may be due to the generation of neutral s cattering centers. Transmission electron microscopy analysis of heavil y O+ implanted films reveals the presence of intragranular regions of isolated strain contrast indicating lattice damage which may be associ ated with these neutral scatter centers.