A method for rapidly computing electric dipolar susceptibilities of la
rge systems such as semiconductor surfaces is given. Bond polarisabili
ties and bond-bond interactions are calculated by an ab initio techniq
ue. Bond interactions are also calculated by a point-dipole model wher
e bond dipoles are assumed to be point dipoles located at the bond mid
points, interacting by point-dipole electric fields. The feasibility o
f applying the method to large systems depends on the fact that point-
dipole-bond interactions agree with ab initio computed interactions fo
r bonds further than two bond distances apart so that only a few bond
interactions need be calculated from first principles.