EFFECTS OF ANNEALING ON PERFORMANCE OF INP SOLAR-CELLS ON GAAS SUBSTRATES

Authors
LAMMASNIEMI J RAKENNUS K
Citation
J. Lammasniemi et K. Rakennus, EFFECTS OF ANNEALING ON PERFORMANCE OF INP SOLAR-CELLS ON GAAS SUBSTRATES, Solar energy materials and solar cells, 30(4), 1993, pp. 301-307
Citations number
9
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
30
Issue
4
Year of publication
1993
Pages
301 - 307
Database
ISI
SICI code
0927-0248(1993)30:4<301:EOAOPO>2.0.ZU;2-Z
Abstract
Effects of annealing on crystal structure and device characteristics o f InP solar cells on GaAs substrates were studied. Two different metho ds, thermally cycled annealing during the growth, and rapid thermal an nealing after the growth, were applied. The results obtained for the a nnealed solar cells were compared with those obtained for nonannealed and homoepitaxial solar cells. The dislocation density was significant ly reduced by annealing from that of the non-annealed heteroepitaxial solar cells, and most of the device characteristics were improved.