PHOTOCURRENT DISTRIBUTION ACROSS THE INTERFACIAL REGION OF THE N-GAASELECTROLYTE JUNCTION/

Authors
PEAT R KUCERNAK AR WILLIAMS DE
Citation
R. Peat et al., PHOTOCURRENT DISTRIBUTION ACROSS THE INTERFACIAL REGION OF THE N-GAASELECTROLYTE JUNCTION/, Faraday discussions, (94), 1992, pp. 369-385
Citations number
26
Categorie Soggetti
Chemistry Physical
Journal title
Faraday discussions → ACNP
ISSN journal
13596640
Issue
94
Year of publication
1992
Pages
369 - 385
Database
ISI
SICI code
1359-6640(1992):94<369:PDATIR>2.0.ZU;2-P
Abstract
A scanning laser microscope has been used to study the photoelectroche mical etching of n-GaAs at the electrolyte interface. Results are pres ented that show directly, in a qualitative way, the distribution of in terfacial charge transfer in the vicinity of microscopic surface defec ts and the effect of potential and electrolyte composition on this dis tribution.