TRAPS FOR EXCITONS AND INTERSTITIAL ATOMS IN EDGE-DEFINED FILM-FED GROWTH-SILICON

We show from the power dependence of photoluminescence of as-grown edg e-defined film-fed film-grown silicon (EFG Si) that there are few addi tional nonradiative traps for excitons in EFG Si relative to electroni c grade silicon. The first application of cathodoluminescence topograp hy to EFG Si reveals only a small (10%) decrease in the luminescence a t grain boundaries from radiation-damage centers at grain boundaries. A radiation-damage complex formed by migration of an interstitial carb on atom is shown to be created, and also destroyed, at rates very simi lar to those in electronic grade silicon, indicating the absence of in terstitial traps specific to EFG Si.