DEPENDENCE OF CONDUCTION-BAND EFFECTIVE-MASS ON QUATERNARY ALLOY COMPOSITION OF (IN0.52AL0.48AS)Z(IN0.53GA0.47AS)1-Z LATTICE-MATCHED TO INP

Cyclotron resonance measurements were carried out on high quality (In0 .52Al0.48As)z(In0.53Ga0.47As)1-z thick layers grown on InP substrates by molecular beam epitaxy. The measurements were performed at 60 K and we were able to obtain the electron effective mass dependence with z in the whole range of composition 0 less-than-or-equal-to z less-than- or-equal-to 1. Using the band-gap values as obtained from photolumines cence measurements on the same samples at 60 K, nonparabolicity correc tions were taken into account to obtain the effective mass m0 at the conduction band edge. A nonlinear variation m0 with z could be inferr ed from our experimental data. The expression m0(z)/m(e)=0.043 + 0.04 2z - 0.016z2, which includes a quadratic dependence in z (or a so-call ed bowing parameter), gives a very good fit to our experimental data.