NOVEL METHOD FOR REJUVENATING AND FABRICATING STABLE SE GAAS SURFACES/

Rejuvenation of the oxidized Se/GaAs surface has been realized by depo sition of a thin Al layer. The results provided by synchrotron radiati on photoelectron spectroscopy show that upon Al deposition, oxygen ori ginally bound to Ga segregates to the surface and forms a more thermod ynamically stable Al oxide species. In addition, a reduction in band b ending is realized suggesting that this method may be useful as a mean s of fabricating a wide range of passivated overlayer/Se/GaAs interfac es.