GRADED BAND-GAP CU(IN,GA)SE2 THIN-FILM SOLAR-CELL ABSORBER WITH ENHANCED OPEN-CIRCUIT VOLTAGE

Authors
CONTRERAS M TUTTLE J DU DH QI Y SWARTZLANDER A TENNANT A NOUFI R
Citation
M. Contreras et al., GRADED BAND-GAP CU(IN,GA)SE2 THIN-FILM SOLAR-CELL ABSORBER WITH ENHANCED OPEN-CIRCUIT VOLTAGE, Applied physics letters, 63(13), 1993, pp. 1824-1826
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
13
Year of publication
1993
Pages
1824 - 1826
Database
ISI
SICI code
0003-6951(1993)63:13<1824:GBCTSA>2.0.ZU;2-3
Abstract
An important development in polycrystalline Cu(In,Ga)Se2 (CIGS) thin-f ilm photovoltaic solar cells is the attainment of a high voltage devic e simultaneous with state-of-the-art conversion efficiency. This lette r describes a CIGS-based solar cell that demonstrates an open-circuit voltage ( V(oc)) approaching 700 mV and a total-area conversion effici ency of 12.2%. The high value of V(oc) was achieved by grading In/Ga t hrough the absorber by a computer-controlled physical vapor deposition (PVD) process that utilizes variable metal fluxes.