INGAAS INGAASP INTEGRATED TUNABLE DETECTOR GROWN BY CHEMICAL BEAM EPITAXY/

Authors
CHOA FS TSANG WT LOGAN RA GNALL RP KOCH TL BURRUS CA WU MC CHEN YK KAPRE R
Citation
Fs. Choa et al., INGAAS INGAASP INTEGRATED TUNABLE DETECTOR GROWN BY CHEMICAL BEAM EPITAXY/, Applied physics letters, 63(13), 1993, pp. 1836-1838
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
13
Year of publication
1993
Pages
1836 - 1838
Database
ISI
SICI code
0003-6951(1993)63:13<1836:IIITDG>2.0.ZU;2-3
Abstract
By controlling the thickness of the grating depth with chemical beam e pitaxy (CBE) growth time, we report in this letter the design and perf ormance of an integrated tunable detector. A carefully designed tunabl e active filter, which allows only one below threshold Fabry-Perot mod e for operation, is integrated with a waveguide detector. The full tun ing range of this kind of tunable device can now be utilized for syste m applications.